RUH4040M2

RUH4040M2 N-Channel Advanced Power MOSFET Features 40V/40A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Converters On board power for server Synchronous rectification Pin Description D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 40 ±20 150 -55 to 150 40 V °C °C A TC=25°C 160 A TC=25°C 40 TC=100°C 25 A TA=25°C 18 TA=70°C 14 TC=25°C 34 TC=100°C 13 W TA=25°C 4.2 TA=70°C 2.7 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2017 1 www.ruichips.com RUH4040M2 Symbol Parameter Rating Unit RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings 3.72 30 EAS④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) 42 Symbol Parameter Test Condition RUH4040M2 Min. Typ. Max. Static Characteristi...