RUL035N02
Nch 20V 3.5A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
20V 43mW 3.5A 1.0W
lFeatures 1) Low on - res...
RUL035N02
Nch 20V 3.5A Power
MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
20V 43mW 3.5A 1.0W
lFeatures 1) Low on - resistance.
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
lApplication DC/DC converters
lAbsolute maximum ratings(Ta = 25°C) Parameter
Drain - Source
voltage Continuous drain current Pulsed drain current Gate - Source
voltage
Power dissipation
Junction temperature Range of storage temperature
lOutline
TUMT6
SOT-363T
(6) (5) (4)
(1) (2) (3)
lInner circuit
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Taping 180 8 3,000 TR XD
Symbol
VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg
Value 20 3.5 7 10 1.0 0.32 150
-55 to +150
Unit V A A V W W °C °C
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1/11
2013.02 - Rev.B
RUL035N02 lThermal resistance
Parameter
Thermal resistance, junction - ambient
Data Sheet
Symbol
RthJA *3 RthJA *4
Values Min. Typ. Max.
Unit
- - 125 °C/W
- - 391 °C/W
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Values Min. Typ. Max.
Unit
20 - - V
Breakdown
voltage temperature coefficient
ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C
Zero gate
voltage drain current Gate - Source leaka...