1.2V Drive Pch MOSFET
RZE002P02
zStructure Silicon P-channel MOSFET
zFeatures 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive.
zApplications Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Souce current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of.
1.2V Drive Pch MOSFET
1.2V Drive Pch MOSFET
RZE002P02
zStructure Silicon P-channel MOSFET
zFeatures 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive.
zApplications Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Souce current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150
0.8 1.6 0.1Min.
zDimensions (Unit : mm)
EMT3
1.6 0.3
(3)
0.7 0.55
(2) (1) 0.2 0.2
0.5 0.5 1.0
0.15
(1)Source (2)Gate (3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
∗2 (2)
∗1
(1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Source (2) Gate (3) Drain
Unit V V mA mA mA mA
mW °C °C
zThermal resistance
Parameter Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol Rth(ch-a) ∗
Limits 833
Unit °C/W
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1/4
2009.06 - Rev.A
RZE002P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS= ±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −20.