RZF013P01

0.2Max. 1.5V Drive Pch MOSFET RZF013P01 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TUMT3 SOT-323T zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) zApplications Switching (1) Gate (2) Source (3) Drain Abbreviated symbol : XC zEquivalent circuit (3) zPackaging specifications Package Type Code Basic ordering unit (pieces) RZF013P01 Taping TL 3000 (1) ∗2 ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Source current (Body diode) Total power dissipation Continuous Pulsed Continuous Pulsed ID IDP ∗1 IS ∗1 ISP PD ∗2 Channel temperature Tch Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Tstg Limits −12 ±10 ±1.3 ±5.2 −0.6 −5.2 0.8 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 156 Unit V V A A A A W °C °C Unit °C / W www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.02 - Rev.A RZF013P01 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V Gate threshold voltage VGS (th) −0.3 − −1.0 V VDS= −6V...