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MOSFET. RZL025P01 Datasheet |
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Transistors
1.5V Drive Pch MOSFET
RZL025P01
RZL025P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YC
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL025P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−12
±10
±2.5
±10
−0.8
−10
1.0
150
−55 to +150
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth (ch-a) ∗
Limits
125
Unit
°C / W
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
1/5
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
− 44 61 mΩ ID= −2.5A, VGS= −4.5V
Static drain-source on-state
resistance
RDS (on)∗
−
−
60 84 mΩ ID= −1.2A, VGS= −2.5V
81 121 mΩ ID= −1.2A, VGS= −1.8V
Forward transfer admittance
− 110 220 mΩ ID= −0.5A, VGS= −1.5V
Yfs ∗ 3.5
−
−
S VDS= −6V, ID= −2.5A
Input capacitance
Ciss
− 1350 −
pF VDS= −6V
Output capacitance
Coss
− 130 −
pF VGS=0V
Reverse transfer capacitance Crss
− 125 −
Turn-on delay time
td (on) ∗ − 9 −
Rise time
tr ∗ − 35 −
Turn-off delay time
td (off) ∗ −
130
−
Fall time
tf ∗ − 85 −
Total gate charge
Qg ∗ − 13 −
Gate-source charge
Qgs ∗ − 2.5 −
Gate-drain charge
Qgd ∗ − 2.0 −
pF f=1MHz
ns ID= −1.2A
ns VDD −6V
VGS= −4.5V
ns RL 5Ω
ns RG=10Ω
nC VDD −6V, ID= −2.5A
nC VGS= −4.5V
nC RL 2.4Ω, RG=10Ω
∗Pulsed
zBody diode characteristics(Source-drain) (Ta=25°C)
Parameter
Forward voltage
∗ Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗ −
− −1.2 V IS= −2.5A, VGS=0V
RZL025P01
2/5
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Transistors
zElectrical characteristic curves
10
Ta=25℃
Pulsed
8
6
4
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -2.0V
VGS= -1.6V
2 VGS= -1.2V
0
0.0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
RZL025P01
10
Ta=25℃
Pulsed
8
VGS= -10V
VGS= -1.8V
6 VGS= -4.5V
VGS= -2.5V
4 VGS= -1.5V
2
VGS= -1.2V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.2 Typical Output Characteristics(Ⅱ)
10
VDS= -6V
Pulsed
1 Ta= 125°C
Ta= 75℃
Ta= 25℃
Ta= - 25℃
0.1
0.01
0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : -VGS [V]
Fig.3 Typical Transfer Characteristics
1000
Ta=25℃
Pulsed
1000
VGS= -4.5V
Pulsed
1000
VGS= -2.5V
Pulsed
100
10
0.1
.
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
1
DRAIN CURRENT : -ID [A]
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
100
10
0.1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
1
DRAIN CURRENT : -ID [A]
10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
100
10
0.1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
1
DRAIN CURRENT : -ID [A]
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1000
VGS= -1.8V
Pulsed
100
10
0.1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
1
DRAIN CURRENT : -ID [A]
10
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1000
VGS= -1.5V
Pulsed
100
10
0.1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
1
DRAIN CURRENT : -ID [A]
10
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
10
VGS=0V
Pulsed
Ta=125℃
1 Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
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