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RZQ050P01 Datasheet

Part Number RZQ050P01
Manufacturers Rohm
Logo Rohm
Description Pch -12V -5A Power MOSFET
Datasheet RZQ050P01 DatasheetRZQ050P01 Datasheet (PDF)

RZQ050P01 Pch -12V -5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD -12V 26mW -5A 1.25W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6). 5) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperatu.

  RZQ050P01   RZQ050P01






Pch -12V -5A Power MOSFET

RZQ050P01 Pch -12V -5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD -12V 26mW -5A 1.25W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT6). 5) Pb-free lead plating ; RoHS compliant lApplication DC/DC converters lAbsolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature lOutline TSMT6 SOT-457T (6) (5) (4) (1) (2) (3) lInner circuit (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Taping 180 8 3,000 TR YF Symbol VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg Value -12 5 20 10 1.25 0.6 150 -55 to +150 Unit V A A V W W °C °C www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.10 - Rev.B RZQ050P01 lThermal resistance Parameter Thermal resistance, junction - ambient Data Sheet Symbol RthJA *3 RthJA *4 Values Min. Typ. Max. Unit - - 100 °C/W - - 208 °C/W lElectrical characteristics(Ta = 25°C) ,unless otherwise specified Parameter Symbol Conditions Min. Values Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA -12 - - Unit V Breakdown voltage temperature coefficient ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C - Zero gat.


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