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RZR025P01 Datasheet

Part Number RZR025P01
Manufacturers Rohm
Logo Rohm
Description 1.5V Drive Pch MOSFET
Datasheet RZR025P01 DatasheetRZR025P01 Datasheet (PDF)

Transistors 1.5V Drive Pch MOSFET RZR025P01 RZR025P01 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). zApplication Switching zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TSMT3 SOT-346T 2.9 0.4 (3) (1) (2) 0.95 0.95 1.9 1.0MAX 0.85 0.7 0~0.1 0.16 1.6 2.8 0.3~0.6 (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : YC zPackaging specifications Package T.

  RZR025P01   RZR025P01






1.5V Drive Pch MOSFET

Transistors 1.5V Drive Pch MOSFET RZR025P01 RZR025P01 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V). zApplication Switching zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TSMT3 SOT-346T 2.9 0.4 (3) (1) (2) 0.95 0.95 1.9 1.0MAX 0.85 0.7 0~0.1 0.16 1.6 2.8 0.3~0.6 (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : YC zPackaging specifications Package Type Code Basic ordering unit (pieces) RZR025P01 Taping TL 3000 zEquivalent circuit (3) (1) ∗2 ∗1 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −12 ±10 ±2.5 ±10 −0.8 −10 1.0 150 −55 to +150 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Unit V V A A A A W °C °C zThermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W (1) Gate (2) Source (3) Drain 1/5 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V Zero gate voltage dra.


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