Transistors
1.5V Drive Pch MOSFET
RZR025P01
RZR025P01
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V).
zApplication Switching
zStructure Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3 SOT-346T
2.9 0.4 (3)
(1) (2) 0.95 0.95
1.9
1.0MAX 0.85 0.7
0~0.1
0.16
1.6 2.8 0.3~0.6
(1) Gate (2) Source (3) Drain
Each lead has same dimensions Abbreviated symbol : YC
zPackaging specifications
Package
T.
1.5V Drive Pch MOSFET
Transistors
1.5V Drive Pch MOSFET
RZR025P01
RZR025P01
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). 4) Low voltage drive (1.5V).
zApplication Switching
zStructure Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3 SOT-346T
2.9 0.4 (3)
(1) (2) 0.95 0.95
1.9
1.0MAX 0.85 0.7
0~0.1
0.16
1.6 2.8 0.3~0.6
(1) Gate (2) Source (3) Drain
Each lead has same dimensions Abbreviated symbol : YC
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZR025P01
Taping TL
3000
zEquivalent circuit
(3)
(1) ∗2
∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −12 ±10 ±2.5 ±10 −0.8 −10 1.0 150 −55 to +150
(2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Unit V V A A A A W °C °C
zThermal resistance
Parameter Channel to ambient
∗ When mounted on a ceramic board.
Symbol Rth (ch-a) ∗
Limits 125
Unit °C / W
(1) Gate (2) Source (3) Drain
1/5
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V
Zero gate voltage dra.