1.5V Drive Pch MOSFET
RZR040P01
zStructure Silicon P-channel MOSFET
zFeatures 1) Low on-resistance. 2) High power pack...
1.5V Drive Pch
MOSFET
RZR040P01
zStructure Silicon P-channel
MOSFET
zFeatures 1) Low on-resistance. 2) High power package. 3) Low
voltage drive. (1.5V)
zApplications Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZR040P01
Taping TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source
voltage
Gate-source
voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −12 ±10 ±4 ±16 −0.8 −16 1.0 150 −55 to +150
Unit V V A A A A W °C °C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol Rth(ch-a) ∗
Limits 125
Unit °C / W
zDimensions (Unit : mm)
TSMT3 SOT-346T
2.9 0.4 (3)
1.0MAX 0.85 0.7
1.6 2.8 0.3~0.6
(1) Gate (2) Source (3) Drain
(1) (2) 0.95 0.95
1.9
0~0.1 0.16
Each lead has same dimensions Abbreviated symbol : YE
zInner circuit
(3)
∗2 (1)
∗1 ∗1 ESD PROTECTION DIODE (2) ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain
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1/4
2009.06 - Rev.A
RZR040P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown
voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V
Zero gate
voltage drain...