LESHAN RADIO COMPANY, LTD.
60V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● RDS(ON) ≦200mΩ@VGS=3.3V
● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
● S- Prefix for Automotive and Other Applications Req...
