General Purpose Transistor
PNP Silicon
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MMBT2907LT1 MMBT2907ALT1 S-MMBT2907LT1
S-MMBT2907ALT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value 2907 2907A –40.
General Purpose Transistor
General Purpose Transistor
PNP Silicon
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MMBT2907LT1 MMBT2907ALT1 S-MMBT2907LT1
S-MMBT2907ALT1
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value 2907 2907A –40 –60
–60 –5.0 –600
Unit Vdc Vdc Vdc mAdc
3
1 2
SOT–23
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.8 mW/°C 556 °C/W 300 mW
2.4 417 –55 to +150
mW/°C °C/W
°C
DEVICE MARKING
MMBT2907LT1 = M2B, MMBT2907AL T1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –10 mAdc, I B = 0)
MMBT2907
MMBT2907A
Collector–Emitter Breakdown Voltage(I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage(I E = –10 µAdc, I C = 0)
Collector Cutoff Current( V CB = –30Vdc, I BE(OFF) = –0.5Vdc)
Collector Cutoff Current
( V CB = –50Vdc, I E = 0)
MMBT2907 MMBT2907A
V (BR)CEO
V (BR)CBO V (B.