SI-TECH SEMICONDUCTOR CO.,LTD S10H06R/S
N-Channel MOSFET
Features
█ 100V,60A,Rds(on)(typ)=15mΩ @Vgs=10V █ High Ruggedn...
SI-TECH SEMICONDUCTOR CO.,LTD S10H06R/S
N-Channel
MOSFET
Features
█ 100V,60A,Rds(on)(typ)=15mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description
This Power
MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low
voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS
PD
TJ TSTG
Drain-Source
Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source
Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃
Operating Junction Temperature Range Storage Temperature Rang...