S10H07M

SI-TECH SEMICONDUCTOR CO.,LTD S10H07M N-Channel MOSFET Features █100V,70A,Rds(on)(typ)=9.2mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Value 100 70 58 280 ±25 270 131 0.87 -55 to +175 -55 to +175 Max. 1.14 63 Units V A A A V mJ W W/℃ ℃ ℃ Units ℃/W ℃/W Ver.1.6 -1- Apr.2019 SI-TECH SEMICONDUCTOR CO.,LTD S10H07M Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Drain-Source Breakdown V...