SI-TECH SEMICONDUCTOR CO.,LTD S10H07M
N-Channel MOSFET
Features
█100V,70A,Rds(on)(typ)=9.2mΩ @Vgs=10V █ High Ruggednes...
SI-TECH SEMICONDUCTOR CO.,LTD S10H07M
N-Channel
MOSFET
Features
█100V,70A,Rds(on)(typ)=9.2mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description
This Power
MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low
voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS
PD
TJ TSTG
Drain-Source
Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃)
Pulsed Drain Current (Note 1) Gate-Source
Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃
Operating Junction Temperature Range Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c Rth j-a
Parameter
Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient
Value 100 70 58 280 ±25 270 131 0.87 -55 to +175 -55 to +175
Max.
1.14 63
Units V A A A V mJ W
W/℃ ℃ ℃
Units
℃/W ℃/W
Ver.1.6
-1-
Apr.2019
SI-TECH SEMICONDUCTOR CO.,LTD S10H07M
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS IDSS IGSS
VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
Drain-Source Breakdown V...