650V N-Channel MOSFET
Description The 10N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
Features
• 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 36 nC) • Low Crss ( typical 5.8pF) • Fast switching • 100% avalanche te.
650V N-Channel MOSFET
650V N-Channel MOSFET
Description The 10N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
Features
• 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 36 nC) • Low Crss ( typical 5.8pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
S10N65C
1 TO-220
1 TO-220F
2.Drain
1.Gate
3.Source
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol R JC R CS R JA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
0510-85899716
10N65
10N65F
650
10 10 *
6.5 6.5 *
40 40 *
±30
758
10
19.8
.