SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. TV VERTICAL OUTPUT APPLICATIONS.
FEATURES ...
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. TV VERTICAL OUTPUT APPLICATIONS.
FEATURES . Good Linearity of hEE . Complementary to S1237
Unit in mm
10.3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Emitter Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature
SYMBOL vCBO VcEO v EBO ic IE IB
pC
T
J
T stg
RATING 90 90
5 4
-4
3
40
150
-55-150
UNIT V V V A A A
W
°C °C
a
2.54
>r
Ai
2.54
N
Si
J"°Jr-i
-
to ci
X
E-
4
{
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC TOSHIBA
TO— 220AB SC—4 6
g— 10A1A
Mounting Kit No. AC75
Weight : 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector-Emitter Breakdown
Voltage
!CBO lEBO
VCB=90V, I E=0 VEB=5V, I C=0
V (BR) CEO IC=50mA, IB=0
DC Current Gain
Collector-Emi...
