S29GL256S

S29GL01GS, S29GL512S, S29GL256S, S29GL128S 128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ Flash Parallel, 3.0 V General description The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive characteristics CMOS 3.0 V core with versatile I/O 65 nm MIRRORBIT™ Eclipse technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O feature - Wide I/O voltage range (VIO): 1.65 V to VCC ×16 data bus Asynchronous 32-byte page read 512-byte programming buffer - Programming in page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction Sector erase - Uniform 128-kbyte sectors Suspend and resume commands for program and erase operations Status register, data polling, and ready/busy pin methods to determine device status Advanced sector protection (ASP) - Volatile and non-volatile protection methods ...