S29JL064H

S29JL064H 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Distinctive Characteristics Architectural Advantages Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations www.DataSheet4U.com „ „ Flexible Bank architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions. Boot Sectors — Top and bottom boot sectors in the same device — Any combination of sectors can be erased Manufactured on 0.13 µm process technology SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. — Customer lockable: One-time programmable only. Once locked, data cannot be changed Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. Compatible with JEDEC standards — Pinout and software compatible with single-powersupply flash standard „ „ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode Cycling Endurance: 1 million cycles per sector typical Data Retention: 20 years typical PRELIMINARY „ „ So...