Elektronische Bauelemente
S2N7002DW
115mA, 60V Dual N-Channel MOSFET
RoHS Compliant Product A Suffix of “-C” specifies...
Elektronische Bauelemente
S2N7002DW
115mA, 60V Dual N-Channel
MOSFET
RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
MECHANICAL DATA
Case: SOT-363,Molded Plastic. Case Material-UL Flammability Rating 94V-0 Terminals: Solderable per MIL-STD-202,
Method 208 Weight: 0.006 grams(approx.)
DEVICE MARKING: 702
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size 7’ inch
SOT-363
REF.
A B C D E F
Millimeter
Min.
2.00 2.15 1.15
Max.
2.20 2.45 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G H J K L
Millimeter
Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15
8°
0.650 TYP.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source
Voltage Drain – Gate
Voltage RGS=1MΩ Gate – Source
Voltage
VDS VDGR VGS
Continuous Drain Current Power Dissipation Maximum Junction-to-Ambient
ID PD RθJA
Operating Junction & Storage Temperature Range
Note: 1. Pulse Width Limited by Maximum Junction Temperature.
TJ, TSTG
Rating
60 60 ±20 115 380 328 -55~150
Unit
V V V mA mW °C / W °C
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
S2N7002DW
115mA, 60V Dual N-Channel
MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown
Voltage
Gate-Threshold
Voltage
Gate-Source Leakage
Zero Gate
Voltage Drain Current TC= 25°C TC= 125°C
On-Sta...