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S2N7002DW

SeCoS

Dual N-Channel MOSFET

Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies...


SeCoS

S2N7002DW

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Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANICAL DATA  Case: SOT-363,Molded Plastic.  Case Material-UL Flammability Rating 94V-0  Terminals: Solderable per MIL-STD-202, Method 208  Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Package MPQ SOT-363 3K Leader Size 7’ inch SOT-363 REF. A B C D E F Millimeter Min. 2.00 2.15 1.15 Max. 2.20 2.45 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain – Source Voltage Drain – Gate Voltage RGS=1MΩ Gate – Source Voltage VDS VDGR VGS Continuous Drain Current Power Dissipation Maximum Junction-to-Ambient ID PD RθJA Operating Junction & Storage Temperature Range Note: 1. Pulse Width Limited by Maximum Junction Temperature. TJ, TSTG Rating 60 60 ±20 115 380 328 -55~150 Unit V V V mA mW °C / W °C http://www.SeCoSGmbH.com/ 19-May-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current TC= 25°C TC= 125°C On-Sta...




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