MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These sta...
MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
* Low Forward
Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory
ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives
S30C70 Thru S30C100
SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 70-100 VOLTS
TO-220AB
MAXIMUM RATINGS
Characteristic
Symbol S30C70 S30C80 S30C90 S30C100 Unit
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
VRRM VRWM
VR
70
RMS Reverse
Voltage
Average Rectifier Forward Current Per diodes Total Device (Rated VR),TC=125
Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz)
Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half-wave, single phase, 60Hz)
Operating and Storage Junction Temperature Range
VR(RMS) IF(AV) IFM IFSM
TJ , TSTG
49
80 90 100
56 63
15 30 30
250
-65 to +150
70
V V A A A
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol S30C70 S30C80 S30C90 S30C100
Maximum Instantaneo...