S34ML16G2

S34ML16G2 16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded General Description Cypress S34ML16G2 16-Gb NAND is offered in 3.3 VCC with ×8 I/O interface. This document contains information for the S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die data sheet: S34ML01G2_04G2. Distinctive Characteristics  Density – 16-Gb (4-Gb  4)  Architecture (For each 4-Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed  Supply Voltage – 3.3 V device: Vcc = 2.7 V ~ 3.6 V  Security – One Time Programmable (OTP) area – Serial number (unique ID) – Hardware program/erase disabled during power transition  Additional Features – Supports Multiplane Program and Erase commands – Supports Copy Back Program – Supports Multiplane Copy Back Program – Supports Read Cache  Electronic Signature – Manufacturer ID: 01h  Operating Temperature – Industrial: 40 °C to 85 °C Performance  Page Read / Program – Random access: 30 µs (Max) – Sequential access: 25 ns (Min) – Program time / Multiplane Program time: 300 µs (Typ)  Block Erase / Multiplane Erase – Block Erase time: 3.5 ms (Typ)  Reliability – 10...