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S34MS08G2

Cypress Semiconductor

NAND Flash Memory

S34MS08G2 8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded Distinctive Characteristics  Density – ...


Cypress Semiconductor

S34MS08G2

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S34MS08G2 8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded Distinctive Characteristics  Density – 8 Gb (4 Gb x 2)  Architecture (For each 4 Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.0 compliant – Address, Data and Commands multiplexed  Supply Voltage – 1.8V device: VCC = 1.7V ~ 1.95V  Security – One Time Programmable (OTP) area – Serial number (unique ID) – Hardware program/erase disabled during power transition  Additional Features – Supports Multiplane Program and Erase commands – Supports Copy Back Program – Supports Multiplane Copy Back Program – Supports Read Cache  Electronic Signature – Manufacturer ID: 01h  Operating Temperature – ...




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