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S3D

ON Semiconductor

General-Purpose Rectifiers

General-Purpose Rectifiers S3A-S3N Features • Low−Profile Package • Glass−Passivated Junction • UL Flammability Classif...


ON Semiconductor

S3D

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Description
General-Purpose Rectifiers S3A-S3N Features Low−Profile Package Glass−Passivated Junction UL Flammability Classification: 94V−0 UL Certified, UL #E258596 These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Symbol Parameter S3A S3B S3D S3G S3J S3K S3M S3N Unit VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 1200 V VRMS RMS Reverse Voltage 35 70 140 280 420 560 700 840 V www.onsemi.com Cathode (2) Anode (1) SMC CASE 403AG VR DC 50 100 200 400 600 800 1000 1200 V Blocking Voltage IF(AV) IFSM Average Rectified Forward Current TL = 105°C Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 3.0 100 A Anode Cathode (1) (2) A MARKING DIAGRAM TSTG Storage Temperature Range −55 to +150 °C TJ Operating Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) Symbol Parameter Value Unit $Y&Z&3 S3X $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code S3X = Specific Device Code X = A−N PD Power Dissipation 2.6 W RqJA Thermal Resistance, Junction-to-Ambient 100 °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. RqJL Thermal Resistance, Junction-to-Lead 13 °C/...




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