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S40N08M Datasheet

Part Number S40N08M
Manufacturers SI-TECH
Logo SI-TECH
Description N-CHANNEL POWER MOSFET
Datasheet S40N08M DatasheetS40N08M Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S40N08M N-Channel MOSFET Features █40V,80A,Rds(on)(typ)=5mΩ @Vgs=10V Rds(on)(typ)=6mΩ @Vgs=4.5V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application.

  S40N08M   S40N08M






N-CHANNEL POWER MOSFET

SI-TECH SEMICONDUCTOR CO.,LTD S40N08M N-Channel MOSFET Features █40V,80A,Rds(on)(typ)=5mΩ @Vgs=10V Rds(on)(typ)=6mΩ @Vgs=4.5V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Value 40 80 64 320 ±20 182 109 0.73 -55 to +175 -55 to +175 Max. 1.37 72 Units V A A A V mJ W W/℃ ℃ ℃ Units ℃/W ℃/W Ver.1.6 -1- May.2019 SI-TECH SEMICONDUCTOR CO.,LTD S40N08M Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss D.


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