SI-TECH SEMICONDUCTOR CO.,LTD S40N08M
N-Channel MOSFET
Features
█40V,80A,Rds(on)(typ)=5mΩ @Vgs=10V Rds(on)(typ)=6mΩ @Vgs=4.5V
█ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application.
N-CHANNEL POWER MOSFET
SI-TECH SEMICONDUCTOR CO.,LTD S40N08M
N-Channel MOSFET
Features
█40V,80A,Rds(on)(typ)=5mΩ @Vgs=10V Rds(on)(typ)=6mΩ @Vgs=4.5V
█ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability
General Description
This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS
PD
TJ TSTG
Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃
Operating Junction Temperature Range Storage Temperature Range
Thermal Characteristics
Symbol
Rth j-c Rth j-a
Parameter
Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient
Value 40 80 64 320 ±20 182 109 0.73
-55 to +175 -55 to +175
Max.
1.37 72
Units V A A A V mJ W
W/℃ ℃ ℃
Units
℃/W ℃/W
Ver.1.6
-1-
May.2019
SI-TECH SEMICONDUCTOR CO.,LTD S40N08M
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS IDSS IGSS
VGS(th)
RDS(on)
Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
D.