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S6A13 Datasheet

Part Number S6A13
Manufacturers Toshiba
Logo Toshiba
Description Thyristor Silicon Planar Type
Datasheet S6A13 DatasheetS6A13 Datasheet (PDF)

S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications Unit: mm FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/µs Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max. · · · · · Maximum Ratings Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge fo.

  S6A13   S6A13






Thyristor Silicon Planar Type

S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications Unit: mm FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/µs Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max. · · · · · Maximum Ratings Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range Symbol VDRM ITRM IFRM Rating 800 500 500 Unit V A A di/dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 750 5 0.5 10 -5 2 -40~125 -40~150 A/ms W W V V A °C °C JEDEC JEITA TOSHIBA ― ― 13-10J1B Weight: 1.5 g (typ.) Note: VD < = 0.8 ´ rated, Tc = 85°C, igp > = 60 mA, tgw > = 10 ms, tgr < = 150 ns Marking ※1 ※2 ※1 MARK S6A13 TYPE NAME S6A13 ※2 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year) 1 2002-01-23 S6A13 Electrical Characteristics (Ta = 25°C) Characteristics Repetitive peak OFF-state current Peak ON-state voltage (thyristor) Peak forward voltage (diode) Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal re.


2005-05-23 : DF1700    TODX295    U2480B    KK55GB    NJM2383    S6A13    ON1215    SDB20S30    PJ7800    S6744   


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