S6A13
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
Unit: mm FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/µs Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max.
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Maximum Ratings
Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge fo.
Thyristor Silicon Planar Type
S6A13
TOSHIBA Thyristor Silicon Planar Type
S6A13
Condenser Discharge Control Applications
Unit: mm FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/µs Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 µs) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max.
· · · · ·
Maximum Ratings
Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range Symbol VDRM ITRM IFRM Rating 800 500 500 Unit V A A
di/dt PGM PG (AV) VFGM VRGM IGM Tj Tstg
750 5 0.5 10 -5 2 -40~125 -40~150
A/ms W W V V A °C °C
JEDEC JEITA TOSHIBA
― ― 13-10J1B
Weight: 1.5 g (typ.)
Note: VD < = 0.8 ´ rated, Tc = 85°C, igp > = 60 mA, tgw > = 10 ms, tgr < = 150 ns
Marking
※1 ※2
※1
MARK
S6A13
TYPE NAME
S6A13
※2
Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year)
1
2002-01-23
S6A13
Electrical Characteristics (Ta = 25°C)
Characteristics Repetitive peak OFF-state current Peak ON-state voltage (thyristor) Peak forward voltage (diode) Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal re.