STS6NF20V
Datasheet
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package
5 8
Feat...
STS6NF20V
Datasheet
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power
MOSFET in an SO-8 package
5 8
Features
Order code
VDS
RDS(on) max.
ID
4 1
STS6NF20V
40 mΩ (@4.5 V)
20 V
6A
45 mΩ (@2.7 V)
SO-8
1
S
2
S
8
D
7
D
Ultra low threshold gate drive 100% avalanche tested Low gate charge
Applications
Switching applications
S
3
G
4
6
D
D
5
Description
This Power
MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
SC12830N
Product status link STS6NF20V
Product summary
Order code
STS6NF20V
Marking
6F20V-
Package
SO-8
Packing
Tape and reel
DS2184 - Rev 5 - November 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source
voltage
VGS
Gate-source
voltage
Drain current (continuous) at Tamb = 25 °C ID
Drain current (continuous) at Tamb = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at Tamb = 25 °C
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol Rthj-amb
Table 2. Thermal data Parameter T...