S80N22T

SI-TECH SEMICONDUCTOR CO.,LTD N-Channel MOSFET S80N22T Features █ 80V,220A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Value 80 220 154 880 ± 25 2200 375 2.5 -55 to +175 -55 to +175 Units V A A A V mJ W W/℃ ℃ ℃ Symbol Rth j-c Rth c-s Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Max. 0.4 0.5 61.5 Units ℃/ W ℃/ W ℃/ W - 1 - Dec.2016 SI-TECH SEMICONDUCTOR CO.,LTD S80N22T Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Qg Qgs Qgd t d(on) tr t d(o...