Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MMOOSFSEFTET
Dual N-Channel Enhancement Mode Field Effe...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MMOOSFSEFTET
Dual N-Channel Enhancement Mode Field Effect Transistor
S8205A
Features 5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25
TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature
Symbol VDS VGS ID IDM
PD
R JA R JC Tj.Tstg
Rating 20 8
5
20 2.0 1.6 78 40 -55 to +150
Unit V V
A
A W W /W /W
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MOSMFOETSFET
S8205A
Electrical Characteristics Ta = 25
Parameter Drain-Source Breakdown
Voltage
Zero Gate
Voltage Drain Current Gate-Body Leakage
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS IGSS
VDS = 16V , VGS = 0V VDS = 0V , VGS = 8V
Gate Threshold
Voltage
Drain-Source On-State Resistance *
On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward
Voltage * * Pulse test; pulse width 300 s, duty cycle
VGS(th) VDS = VGS , ID = 250uA
rDS(on) VGS = 4.5V , ID = 5A
VGS = 2.5V , ID = 4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = ...