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S85N10R Datasheet

Part Number S85N10R
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S85N10R DatasheetS85N10R Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features █ 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,D.

  S85N10R   S85N10R






Part Number S85N10S
Manufacturers SI-TECH
Logo SI-TECH
Description N-Channel MOSFET
Datasheet S85N10R DatasheetS85N10S Datasheet (PDF)

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features █ 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,D.

  S85N10R   S85N10R







N-Channel MOSFET

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features █ 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range.


2017-09-23 : MPW1021    ATSAMD10D14A-MNT    ATSAMD10D14A-MUT    ATSAMD10D13A-MNT    ATSAMD10D13A-MUT    ATSAMD10D14A-UUT    ATSAMD10D14A-SSNT    ATSAMD10D14A-SSUT    ATSAMD10D13A-SSNT    ATSAMD10D13A-SSUT   


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