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S9011 Datasheet

Part Number S9011
Manufacturers WEJ
Logo WEJ
Description NPN Transistor
Datasheet S9011 DatasheetS9011 Datasheet (PDF)

RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃ E LECTRICAL CH ARACTERISTICS (Tamb=25℃ u nless o therwise sp ecified) P arameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO V ICBO Test Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base brea.

  S9011   S9011






Part Number S9011
Manufacturers GME
Logo GME
Description NPN Transistor
Datasheet S9011 DatasheetS9011 Datasheet (PDF)

NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 30mA)  Power dissipation.(PC=200mW) APPLICATIONS Pb Lead-free  AM converter, AM/FM if amplifier general purpose transistor Production specification S9011 ORDERING INFORMATION Type No. Marking S9011 1T SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 5 IC C.

  S9011   S9011







Part Number S9011
Manufacturers BL
Logo BL
Description NPN Silicon Epitaxial Planar Transistor
Datasheet S9011 DatasheetS9011 Datasheet (PDF)

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS z AM converter, AM/FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011 Marking 1T SOT-23 Package Code S OT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo.

  S9011   S9011







NPN Transistor

RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃ E LECTRICAL CH ARACTERISTICS (Tamb=25℃ u nless o therwise sp ecified) P arameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO V ICBO Test Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage W Transition frequency CLASSIFICATION OF hFE(1) Rank D 28-45 39E 60 54F 80 G 72-108 H 97-146 I 132-198 J 180-270 J E E C E L R T Ic= 100µA, IE=0 30 IC= 0.1mA , IB=0 20 IE= 100µA, IC=0 4 CB=16V, IE=0 O conditions IC N C L , . O 1 2 3 D T MIN TYP MAX UNIT V V V 0.1 0.1 0.1 270 0.3 1 µA µA µA VCB=16V, IE=0 IEBO VEB= 3.5V, I C=0 VCE=5V, IC=1mA 28 IC= 10 mA, IB= 1mA IC= 10 mA, IB= 1mA VCE=5V, IC=1mA, f=30MHz hFE(1) VCE(sat) VBE(sat) V V fT 150 MHz Range WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] http://www.Datasheet4U.com .


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