S9012

S9012 PNP General Purpose Transistors P b Lead(Pb)-Free www.DataSheet4U.com TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PCM Tj Tstg Value -25 -40 -5 -500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -20 Vdc, IB =0) Collector Cutoff Current (VCB= -40 Vdc, IE=0) Emitter Cutoff Current (VEB= -5.0V d c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min -25 -40 -5 - Max -0.1 -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw S9012 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= -50 mAdc, VCE= -1Vdc) www.DataSheet4U.com (IC= -500 mAdc, VCE= -1Vdc) hFE(1) hFE(2) 64 40 300 - - Collector-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc) VCE(sat) - -0.6 Vdc Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= -50 mAdc) VBE(sat) - -1.2 Vdc Transition frequency fT 150 - MHz Classification Of h FE(1) Rank Range D 64-91 E 78-112 F 96-135 G...