Ordering number:EN2191A
SB0030-01A
Schottky Barrier Diode
10V, 30mA Detection Applications
Features
· Glass sleeve str...
Ordering number:EN2191A
SB0030-01A
Schottky Barrier Diode
10V, 30mA Detection Applications
Features
· Glass sleeve structure. · Detection efficiency : 70%. · Small size (Half the size of the DO-35 heretofore in
use).
Package Dimensions
unit:mm 1153A
[SB0030-01A]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Reverse
Voltage Average Rectified Current Junction Temperature Storage Temperature
Symbol
VR IO Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Forward Current Reverse Current Capacitance Detection Efficiency
Detection Efficiency Circuit
Symbol
IF VF=1.0V IR VR=6V C VR=1V, f=1MHz η f=40MHz
Conditions
C:Cahode A:Anode
Ratings 10 30
100 –55 to +100
Unit V mA ˚C ˚C
Ratings min typ
4.5
70
max
70 1.5
Unit
mA µA pF %
Unit (resistance : Ω, capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/1169TA/O236TA, TS No.2191-1/3
SB0030-01A
No.2191-2/3
SB0030-01A
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELE...