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SB007-03Q Datasheet

Part Number SB007-03Q
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 30V / 70mA Rectifier
Datasheet SB007-03Q DatasheetSB007-03Q Datasheet (PDF)

Ordering number:EN2939A SB007-03Q Schottky Barrier Diode 30V, 70mA Rectifier Applications · High frequency rectifications (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Ultrasmall-sized package permitting SB007-03Q- applied sets to be compact and slim. Package Dimensions unit:mm 1197A [SB007-03Q].

  SB007-03Q   SB007-03Q






Part Number SB007-03Q
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Barrier Diode
Datasheet SB007-03Q DatasheetSB007-03Q Datasheet (PDF)

Ordering number : EN2939B SB007-03Q Schottky Barrier Diode 30V, 70mA, Low IR, Single MCP http://onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (VF max=0.55V) • Low switching noise • Fast reverse recovery time (trr max=10ns) • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package permitting SB007-03Q applied sets to be compact and slim Specifications Absolut.

  SB007-03Q   SB007-03Q







30V / 70mA Rectifier

Ordering number:EN2939A SB007-03Q Schottky Barrier Diode 30V, 70mA Rectifier Applications · High frequency rectifications (switching regulators, converters, choppers). Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Ultrasmall-sized package permitting SB007-03Q- applied sets to be compact and slim. Package Dimensions unit:mm 1197A [SB007-03Q] 1:Anode 2:No Contact 3:Cathode Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions 50Hz sine wave, 1 cycle Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Marking : G trr Test Circuit Symbol Conditions VR IR=20µA VF IF=70mA IR VR=15V C VR=10V, f=1MHz trr IF=IR=10mA, See specified Test Circuit SANYO:MCP Ratings 30 35 70 2 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Ratings min typ 30 3.0 max 0.55 5 10 Unit V V µA pF ns SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62098HA (KT)/D1096GI/D288TA, TS No.2939-1/2 SB007-03Q No products described or contained herein are inten.


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