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SB007T03C Datasheet

Part Number SB007T03C
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 30V/ 70mA Rectifier
Datasheet SB007T03C DatasheetSB007T03C Datasheet (PDF)

Ordering number :EN3617A SB007T03C Schottky Barrier Diode (Series Connection) 30V, 70mA Rectifier Applications · Universal-use rectifier. · High frequency retification (switching regulators, converters, choppers). Package Dimensions unit:mm 1147A [SB007T03C] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Series connection of 2 elements in a.

  SB007T03C   SB007T03C






Part Number SB007T03Q
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 30V / 70mA Rectifier
Datasheet SB007T03C DatasheetSB007T03Q Datasheet (PDF)

Ordering number : ENN4169B SB007T03Q SB007T03Q Schottky Barrier Diode (Series Connection) 30V, 70mA Rectifier Applications • Universal-use rectifiers. • High frequency rectification (switching regulators, converters, choppers). Features • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Series connection of 2 elements in an ultrasmall-sized package fac.

  SB007T03C   SB007T03C







30V/ 70mA Rectifier

Ordering number :EN3617A SB007T03C Schottky Barrier Diode (Series Connection) 30V, 70mA Rectifier Applications · Universal-use rectifier. · High frequency retification (switching regulators, converters, choppers). Package Dimensions unit:mm 1147A [SB007T03C] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits SB007T03C-applied equipment to be made smaller. 1:Anode 2:Cathode 3:Anode Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Non-repetitve Peak Reverse Surge Voltage Average Output Current Surege Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 35 70 2 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rthj-a IR=20µA IF=70mA VR=15V VR=10V, f=1MHz IF=IR=10mA, See specified Test Circuit 620 Conditions Ratings min 30 0.55 5 3.0 10 typ max Unit V V µA pF ns ˚C/W · Marking:N trr Test Circuit Electrical Connection 1:Anode 2:Cathode 3:Anode, Cathode SANYO El.


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