SB02-09NP

Ordering number :EN1924B SB02-09NP Shottky Barrier Diode 90V, 200mA Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1157A [SB02-09NP] Features · Low forward voltage (VF max=0.7V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-92 EIAJ:SC-43 SANYO:NP 1:Anode 2:Cathode 3:No Contact Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions Ratings 90 95 Unit V V mA A 50Hz, resistive load, Ta=88˚C 50Hz sine wave, 1cycle 200 5 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recorvery Time Thermal Resistance Symbol VR VF IR C trr Rthj-a IR=200µA IF=200mA VR=45V VR=–10V, f=1MHz IF=IR=10mA, See specified Test Circuit 165 11 10 Conditions Ratings min 90 0.7 50 typ max Unit V V µA pF ns ˚C/W ttr Test Circuit SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/41096GI (KOTO)/2079MO/O255KI, TS No.1924-1/2 SB02-09NP No products described or contained herein are intende...