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SB10-03A2

Sanyo Semicon Device

30V/ 1.0A Rectifier

Ordering number : EN2929A Schottky Barrier Diode SB10-03A2/SB10-03A3 30V, 1.0A Rectifier Applications • High frequency...



SB10-03A2

Sanyo Semicon Device


Octopart Stock #: O-275010

Findchips Stock #: 275010-F

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Description
Ordering number : EN2929A Schottky Barrier Diode SB10-03A2/SB10-03A3 30V, 1.0A Rectifier Applications High frequency rectification (switching regulators, converters, choppers). Features Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=30ns). Low switching noise. Average rectified current (Io=1.0A). Absolute Maximum Ratings at Ta=25°C Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Rectified Current VRRM VRSM Io SB10-03A2 50Hz, resistive load, sine wave, Ta=50°C (L=8mm, 10×10mm2 print land) SB10-03A3 50Hz, resistive load, sine wave, Ta=46°C (L=3mm, 5×5mm2 print land) 50Hz sine wave, 1 cycle 30 35 1.0 unit V V A 1.0 A Surge Forward Current Junction Temperature Storage Temperature IFSM Tj Tstg 40 125 –40 to +125 min typ A °C °C max 0.55 1.0 30 140 unit V mA ns °C/W Electrical Characteristics at Ta=25°C Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance (Junction-Ambient) VF IR trr Rth(j-a) IF=1.0A VR=30V IFM=1A, –di/dt=50A/µs No fin, device only [SB10-03A2] Package Dimensions 1208 (unit : mm) [SB10-03A3] Package Dimensions 1209 (unit : mm) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O0797GI/D198TA, TS No.2929-1/3 Surge Forward Current, IFSM – A Forward Current, IF – A Average Forward Power Dissipation, PF – W Average Rectified Current, Io – A Forward Voltage, VF – V Ambient Temperatu...




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