Schottky Barrier Rectifier
INCHANGE Semiconductor
SB10U60D1-13
FEATURES ·Low Forward Voltage ·High Operating Junction ...
Schottky Barrier Rectifier
INCHANGE Semiconductor
SB10U60D1-13
FEATURES ·Low Forward
Voltage ·High Operating Junction Temperature ·Extremely low reverse leakage ·Optimized VF vs. IR trade off for high efficiency ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VR
Peak Repetitive Reverse
Voltage DC Blocking
Voltage
60
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 135℃
10
A
Non-repetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
140
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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Schottky Barrier Rectifier
INCHANGE Semiconductor
SB10U60D1-13
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 2
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300us,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum Instantaneous Forward
Voltage
IF= 10A ; TC= 25℃ IF= 10A ; TC= 125℃
0.52 0.50
V
IR
Maximum Instantaneous Reverse Current
VR=60V, TC= 25℃ VR=60V, TC= 125℃
0.4 70
mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide...
