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SB10W05P

Sanyo Semicon Device

50V/ 1A Rectifier

Ordering number:EN4170A SB10W05P Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 1A Rectifier Applications · ...



SB10W05P

Sanyo Semicon Device


Octopart Stock #: O-275115

Findchips Stock #: 275115-F

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Description
Ordering number:EN4170A SB10W05P Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 1A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1222A [SB10W05P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:Anode SANYO:PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 50 55 1 10 –55 to +125 –55 to +125 Unit V V A A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) (1) Rth(j-c) (2) Mounted on 250mm2×0.8mm ceramic board IR=300µA IF=1A VR=25V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 280 100 52 10 Conditons Ratings min 50 0.55 80 typ max Unit V V µA pF ns ˚C/W ˚C/W · Marking:SL trr Test Circuit Electrical Connection 1:Anode 2:Cathode 3:Anode (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Tai...




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