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SB2150

Won-Top Electronics

2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE

® WON-TOP ELECTRONICS SB2150 – SB2200 2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE Pb Features  Schottky Barrier Chip  G...


Won-Top Electronics

SB2150

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® WON-TOP ELECTRONICS SB2150 – SB2200 2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE Pb Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power Loss, High Efficiency  Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes ABA Mechanical Data  Case: DO-15, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.40 grams (approx.)  Mounting Position: Any  Marking: Type Number  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D DO-15 Dim Min Max A 25.4 — B 5.50 7.62 C 0.71 0.864 D 2.60 3.60 All Dimensions in mm C Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage @IF = 2.0A Peak Reverse Current At Rated DC Blocking Voltage @TJ = 25°C @TJ = 100°C Typical Junction Capacitance (Note 2) Thermal Resistance, Junction to Ambient (Note 3) Thermal Resistance, Junction to Lead (Note 3) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM V...




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