DIODE. SB2150 Datasheet

SB2150 Datasheet PDF


Part SB2150
Description 2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE
Feature ® WON-TOP ELECTRONICS SB2150 – SB2200 2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE Pb Features  Schot.
Manufacture Won-Top Electronics
Datasheet
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SB2150
®
WON-TOP ELECTRONICS
SB2150 – SB2200
2.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE
Pb
Features
Schottky Barrier Chip
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 50A Peak
Low Power Loss, High Efficiency
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
ABA
Mechanical Data
Case: DO-15, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-15
Dim Min Max
A 25.4 —
B 5.50 7.62
C 0.71 0.864
D 2.60 3.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
@IF = 2.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
Thermal Resistance, Junction to Lead (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
CJ
R JA
R JL
TJ, TSTG
SB2150
SB2200
150 200
105 140
2.0
50
0.9
0.2
5.0
55
35
14
-65 to +150
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Vertical PCB mounting with 12.7mm lead length on 63.5 x 63.5mm copper pad.
Unit
V
V
A
A
V
mA
pF
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1



SB2150
SB2150 – SB2200
2.5
2.0
1.5
1.0
0.5
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
50
Single Half-Sine-Wave
JEDEC Method
40
30
20
®
10
Pulse Width = 300µs
1% Duty Cycle
WON-TOP ELECTRONICS
1.0
TA = 125°C
TA = 85°C
0.1
TA = 25°C
0.01
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000
1000
100
10
TJ = 125°C
TJ = 75°C
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
100
80
1.0
TJ = 25°C
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
60
40
20
www.wontop.com
2
0
1
10 100
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
1000
© Won-Top Electronics Co., Ltd.
Revision: September, 2012






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