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SB30-03T

Sanyo Semicon Device

30V/ 3A Rectifier

Ordering number:EN4444 SB30-03T Schottky Barrier Diode 30V, 3A Rectifier Applications · High frequency rectification (...


Sanyo Semicon Device

SB30-03T

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Description
Ordering number:EN4444 SB30-03T Schottky Barrier Diode 30V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1255A [SB30-03T] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:No Contact 2:Cathode 3:Anode 4:Cathode SANYO:TP trr Test Circuit unit:mm 1256A [SB30-03T] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg Conditions 1:No Contact 2:Cathode 3:Anode 4:Cathode SANYO:TP-FA Ratings 30 35 Unit V V A A 50Hz, resistive load, Tc=110˚C 50Hz sine wave, 1 cycle 3 20 –55 to +125 –55 to +125 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VR VF IR C trr Rth(j-a) Rthj(j-c) IR=1mA IF=3A VR=15V VR=10V, f=1MHz IF=IR=300mA, See sepcified Test Circuit 90 6 160 30 Conditons Ratings min 30 0.55 200 typ max Unit V V µA pF ns ˚C/W ˚C/W SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 J...




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