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SB30W03T

Sanyo Semicon Device

30V/ 3A Rectifier

Ordering number:EN4445 SB30W03T Schottky Barrier Diode (Twin Type · Cathod Common) 30V, 3A Rectifier Applications · Hi...


Sanyo Semicon Device

SB30W03T

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Description
Ordering number:EN4445 SB30W03T Schottky Barrier Diode (Twin Type · Cathod Common) 30V, 3A Rectifier Applications · High frequency rectification (switching regulators, converters, choppers). Package Dimensions unit:mm 1254A [SB30W03T] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=30ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. trr Test Circuit SANYO:TP 1:Anode 2:Cathode 3:Anode 4:Cathode unit:mm 1257A [SB30W03T] Electrical Connection 1:Anode 2:Cathode 3:Anode 4:Cathode SANYO:TP-FA Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IO IFSM Tj Tstg 50Hz resistive load, Tc=106˚C 50Hz resistive load, Tc=104˚C, Total rating 50Hz sine wave, 1 cycle Conditions Ratings 30 35 3 6 20 –55 to +125 –55 to +125 Unit V V A A A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance (Junction-Ambient) Thermal Resistance (Junction-Case) Symbol VR VF IR C trr Rth(j-a) Rth(j-c) IR=1mA IF=3A VR=15V VR=10V, f=1MHz IF=IR=300mA, See specified Test Circuit. 90 5 160 30 Conditons Ratings min 30 0.55 200 typ max Unit V V µA pF ns ˚C/W ˚C/W SANYO Ele...




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