SBAS16

Elektronische Bauelemente SBAS16 High-Speed Switching Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description * The SBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. S A L 3 2 Top View 1 B D G C Marking H K J SC-59 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm A6- Absolute Maximum Ratings at TA = 25 oC Parameter Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Operating Junction and Storage Temperature Range Symbol VR VRR IF IFR IFSM PD Tj, Tstg Ratings 75 85 250 500 1000 200 -65~+150 Unit V V mA mA mW mW oC Characteristics at TA = 25 Characteristic Symbol Reverse Breakdown Voltage V(BR) VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current IR Total Capacitance CT Reverse Recovery Time Trr Min. 75 - - Max. - 715 855 1000 1250 1 2 6 Unit V mV mV mV mV uA pF nS Test Conditions IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=0, f=1MHz IF=IR=10mA, RL=100 measured at IR=1mA http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 Elektronische Bauelemente Characteristics Curve SBAS16 High-Spe...