SBAT54XV2T1G

BAT54XV2T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features http://onsemi.com Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES 1 CATHODE 2 ANODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Symbol VR Value 30 Unit V 1 2 SOD−523 CASE 502 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Forward Current (DC) Non−Repetitive Peak Forward Current, tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 1.57 IF IFSM IFRM RqJA TJ, Tstg 200 Max 600 300 635 −55 to 125 Unit mW mW/°C mA mA mA °C/W °C 1 JVM G G MARKING DIAGRAM JV = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Stres...