Dual Switching Diode Common Cathode
BAV70L, SBAV70L
Features
• S Prefix for Automotive and Other Applications Requiring...
Dual Switching Diode Common Cathode
BAV70L, SBAV70L
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse
Voltage
VR
100
V
Forward Current
IF
200
mA
Repetitive Peak Forward Current
IFRM
1.5
A
(Pulse Wave = 1 sec, Duty Cycle = 66%)
Non−Repetitive Peak Forward Current
IFSM
A
(Square Wave, TJ = 25°C prior to surge)
t = 1 ms
31
t = 10 ms
16
t = 100 ms
10
t = 1 ms
4.5
t = 10 ms
2.5
t = 100 ms
1.0
t=1s
0.5
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
PD
300
mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
DATA SHEET www.onsemi.com
SOT−23 (TO−236) CASE 318 STYLE 9
3 CATHODE
ANODE 1
2 ANODE
M...
