SBC337

Semiconductor SBC337 NPN Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary pair with SBC327 Ordering Information Type NO. SBC337 Marking SBC337 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 0.38 PIN Connections 1. Collector 2. Base 3. Emitter KST-9022-000 1 SBC337 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 35 5 800 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=1mA, IE=0 VCE=1V, IC=300mA IC=500mA, IB=50mA VCB=25V, IE=0 VCE=1V, IC=100mA VCB=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 35 100 100 16 1.2 700 100 630 - Unit V V mV nA MHz pF * : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630 KST-9022-000 2 SBC337 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC - VBE 2SC5344SF Fig. 3 IC - VCE Fig. 4 VCE(s...