General Purpose Transistors
NPN Silicon
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L
Features
• S...
General Purpose Transistors
NPN Silicon
BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DATA SHEET www.onsemi.com
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT−23 CASE 318 STYLE 6
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter
Voltage Collector − Base
Voltage Emitter − Base
Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
45
V
50
V
5.0
V
500
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina Substrate, (Note 2)
TA = 25°C Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg − 65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
MARKING DIAGRAM
6x M G G
1
6x = Device Code x = A, B, or C
M = Date Code* G = Pb−Free Package (Note: Microdot may be in eith...