SBC847BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range IC Symbol PD RqJA PD RqJA TJ, Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 6.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 Vdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING AND ORDERING INFORMATION SBC847BLT1G S1F (Pb-Free) SOT-23 SBC847BLT1G 3 1 2 SOT–23 1 B ASE 3 COLLECT OR 2 EMIT T ER MARKING DIAGRAM 3 xx xx= Device Marking (See Table Below) 3000/Tape&Reel 1/5 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Collector–Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) V(BR)CES 50 Collector–Base Brea...