RECTIFIER. SBD30C45PN Datasheet

SBD30C45PN Datasheet PDF

Part SBD30C45PN
Description 45V SCHOTTKY RECTIFIER
Feature SBD30C45PN; SBD30C45T/PN/S/PS_Datasheet 30A, 45V SCHOTTKY RECTIFIER DESCRIPTION SBD30C45T/PN/S/PS is Schottky re.
Manufacture Silan Microelectronics
Datasheet
Download SBD30C45PN Datasheet




SBD30C45PN
SBD30C45T/PN/S/PS_Datasheet
30A, 45V SCHOTTKY RECTIFIER
DESCRIPTION
SBD30C45T/PN/S/PS is Schottky rectifier fabricated in silicon
epitaxial planar technology, and is widely used in switching power
supplies, protection circuits, etc.
FEATURES
Guard ring for Stress Protection
High Current Surge Capacity
Low power loss, high efficiency
Low Forward Voltage Drop
ORDERING INFORMATION
Part No.
SBD30C45T
SBD30C45PN
SBD30C45S
SBD30C45STR
SBD30C45T
SBD30C45PS
Package
TO-220-3L
TO-3P
TO-263-2L
TO-263-2L
TO-220HW-3L
TO-247S-3L
Marking
SBD30C45T
30C45
SBD30C45S
SBD30C45S
SBD30C45T
30C45
Hazardous Substance Control
Pb free
Pb free
Halogen free
Halogen free
Pb free
Pb free
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Operation Junction Temperature Range(Note 1)
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
45
30
200
-55~150
-55~150
Note 1: dPtot 1 Condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j a)
Packing
Tube
Tube
Tube
Tape & Reel
Tube
Tube
Unit
V
A
A
C
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case(TO-220-3L\TO-220HW-3L)
Symbol
RθJC
Value
2.0
Unit
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7
Page 1 of 6



SBD30C45PN
SBD30C45T/PN/S/PS_Datasheet
ELECTRICAL CHARACTERISTICS
Characteristics
Forward Voltage
Reverse Leakage Current
Symbol
VF
IR
Test Condition
IF=15A(TC=25C)
IF=15A(TC=125C)
VR=45V(TC=25C)
VR=45V(TC=125C)
Min.
--
--
--
--
Max.
0.70
0.65
100
35
Unit
V
V
μA
mA
TYPICAL CHARACTERISTIC CURVE
Figure1.Typical forward characteristics
100
10
1
0.1
0.01
0
25°C
50°C
75°C
100°C
125°C
150°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Istantaneous Forward voltage, VF(V)
Figure2.Typical reverse characteristics
100
25°C
50°C
75°C
10 100°C
125°C
1
0.1
0.01
0.001
0 10 20 30 40 50
Istantaneous Reverse voltage, VR(V)
Figure3.Capacitance characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
F=1MHz
0
0 5 10 15 20 25 30 35 40 45
Reverse voltage, VR(V)
Figure4.Typical forward current derating curve
20
DC
15
10
5
0
0 25 50 75 100 125 150
case temperature, Tc(°C)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7
Page 2 of 6



SBD30C45PN
PACKAGE OUTLINE
TO-220-3L
SBD30C45T/PN/S/PS_Datasheet
UNIT: mm
TO-3P
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7
Page 3 of 6







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