Schottky Barrier Rectifier
INCHANGE Semiconductor
SBR60A300CT
FEATURES ·With TO-220 packaging ·Soft, fast switching ca...
Schottky Barrier Rectifier
INCHANGE Semiconductor
SBR60A300CT
FEATURES ·With TO-220 packaging ·Soft, fast switching capability ·Low forward
voltage drop ·Low leakage current ·High frequency operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Free-wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS
VR
Peak repetitive reverse
voltage RMS
voltage DC blocking
voltage
300
V
IF(AV)
Average rectified forward current
Per Leg Total
30 60
A
Nonrepetitive peak surge current
IFSM
( 8.3ms single half sine-wave superimposed 235
A
on rated load conditions )
TJ
Junction temperature
-65~175 ℃
Tstg
Storage temperature range
-65~175 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
SBR60A300CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance,junction to case
MAX 1.2
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum instantaneous forward
voltage
IF= 30A; Tc= 25℃ IF= 30A; Tc=125℃
IR
Maximum instantaneous reverse current ( Short duration pulse test used to minimize self-heating effect )
VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃
trr
Reverse recovery time
IF=0.5A;IR=1A;IRR=0.25A
0.94 0.82
V
0.1 ...
