Schottky Barrier Rectifier
INCHANGE Semiconductor
SBT30L100FCT
FEATURES ·Ultra Low Forward Voltage Drop · Excellent Hi...
Schottky Barrier Rectifier
INCHANGE Semiconductor
SBT30L100FCT
FEATURES ·Ultra Low Forward
Voltage Drop · Excellent High Temperature Stability · Patented Super Barrier Rectifier Technology · Soft, Fast Switching Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low
voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
100
V
IF(AV)
Average Rectified Forward per device
Current
per diode
30 15
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 250
A
on rated load conditions
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
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Schottky Barrier Rectifier
INCHANGE Semiconductor
SBT30L100FCT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 2
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward
Voltage IF=15A ; Tc= 25℃
IR
Maximum Instantaneous Reverse Current VR= 100V;Tc= 25℃
MAX 0.70 0.1
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained...
