Spike Clamped Diode
SCD120S
General Features
Silicon Epitaxial Planar Diode Highly Uniform VBR (±7%) guaranteed by...
Spike Clamped Diode
SCD120S
General Features
Silicon Epitaxial Planar Diode Highly Uniform VBR (±7%) guaranteed by Specification Highly Uniform Current Distribution RoHS Compliant & Halogen Free
General Description
This novel diode, manufactured by ARK proprietary silicon process and structure, is featured with both highly uniform breakdown
voltage (VBR). It is suitable for the snubber circuit in various AC/DC power conversions system. The device can effectively relax the electrical stress on system and therefore improve reliability.
Applications
Voltage Clamped circuit
Ordering Information
Part Number
Package
SCD120S
SOD-123
Marking
D12S
Absolute Maximum Ratings
Symbol
Parameter
Power dissipation @ TA=25℃ Ptot Power dissipation @ TL=85℃
PZSM
Non-repetitive peak pulse power dissipation
TA=25℃ unless otherwise specified
Value
Unit
0.5 W
2.0 W
300 W
Thermal Characteristics
Symbol
Parameter
RthJA
Junction-to-Ambient thermal resistance
...
