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SCD545UH Datasheet

Part Number SCD545UH
Manufacturers Zowie Technology
Logo Zowie Technology
Description Schottky Barrier Diode
Datasheet SCD545UH DatasheetSCD545UH Datasheet (PDF)

ZOWIE Schottky Barrier Diode SCD545UH FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 APPLICATION * Switching mode power supply applications * Portable equipment battery applications * High frequency rectification * DC / DC Converter * Telecommunication 0.96-+ 0.2 0.1 2.20 ± 0.1 OUTLINE DIMENSIONS.

  SCD545UH   SCD545UH






Schottky Barrier Diode

ZOWIE Schottky Barrier Diode SCD545UH FEATURES * Halogen-free type * Compliance to RoHS product * Lead less chip form, no lead damage * Low power loss, High efficiency * High current capability, low VF * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 APPLICATION * Switching mode power supply applications * Portable equipment battery applications * High frequency rectification * DC / DC Converter * Telecommunication 0.96-+ 0.2 0.1 2.20 ± 0.1 OUTLINE DIMENSIONS Case : 2010 4.5 ± 0.1 0.95 ± 0.2 Equivalent : SMA DO-214AC MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Laser Cathode band marking Weight : 0.02 gram MARKING SCD 545U. Unit : mm 0.50 0.95 ± 0.2 (45V / 5.0A) PACKING * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton Absolute Maximum Ratings (Ta = 25 oC) ITEM Repetitive peak reverse voltage Symbol VRRM Conditions Rating 45 Unit V Average forward current Peak forward surge current Operating junction and storage temperature range IF(AV) TC = 83 oC IFSM 8.3ms single half sine-wave Tj,TSTG 5 80 -55 to +150 A A oC Electrical characteristics (Ta = 25 oC) ITEM Forward voltage (NOTE 1) Symbol Conditions VF IF = 5.0A Repetitive peak reverse current IRRM VR = Max. VRRM , Ta = 25 oC Junction capacitance Cj VR = 4V, f = 1.0 MHz Thermal resistance Rth(JA) Rth(JC) Junction to am.


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